![](../../../Pictures/02/2/72UK81C.JPG) 2272 |
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This device consists of an infrared emitting diode and an NPN silicon phototransistor mounted side by side on parallel axes in a black plastic housing.Both emitting diode and phototransistor are |
transmissive plastic, which reduces ambient light noise. |
The phototransistor responds to radiation from the LED only when a reflective object passes within its field of view. |
Peak forward current: |
3· 0A (Pulse width |
Collector-emitter voltage: |
30V |
Emitter-collector voltage: |
5V |
Electrical characteristics |
Forward voltage: |
1· 7V, IF = 20mA |
Reverse current: |
100╡A,VF = 2V |
Dark current: |
100nA, VCE = 5V |
On-state current: |
350╡A (min) 700╡A (typ) |
Saturation voltage: |
0· 4V |
*Note: d = distance of reflective surface from sensor. |
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