Photo Reflective Infrared Sensor

Product Details

Photo Reflective Infrared Sensor

2272

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Description:

This device consists of an infrared emitting diode and an NPN silicon phototransistor mounted side by side on parallel axes in a black plastic housing.Both emitting diode and phototransistor are

moulded in infrared

transmissive plastic, which reduces ambient light noise.

The phototransistor responds to radiation from the LED only when a reflective object passes within its field of view.

Absolute maximum ratings

IR LED ratings:

Forward DC current:

50mA

Peak forward current:

3· 0A (Pulse width

1╡s, 300pps)

Reverse voltage:

2· 0V

Power dissipation:

75mW

Phototransistor ratings:

Collector-emitter voltage:

30V

Emitter-collector voltage:

Collector current:

25mA

Power dissipation:

75mW

Electrical characteristics

IR LED ratings:

Forward voltage:

1· 7V, IF = 20mA

Reverse current:

100╡A,VF = 2V

Phototransistor ratings:

Dark current:

100nA, VCE = 5V

On-state current:

350╡A (min) 700╡A (typ)

IF = 20mA, VCE = 5V,

d* = 1· 27mm

Saturation voltage:

0· 4V

IF = 20mA, IC = 100╡A,

d* = 1· 27mm

*Note: d = distance of reflective surface from sensor.